Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform - Archive ouverte HAL
Article Dans Une Revue Materials for Quantum Technology Année : 2024

Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform

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Abstract Single-photon emitters play a crucial role in integrated photonic quantum systems across various material platforms. In this study, we present a cavity-enhanced quantum dot single-photon source in a high-index contrast material platform (GaAs-on-insulator). A quantum dot is embedded in a microring resonator with a quality factor of approximately 9000, where the cavity-induced light enhancement results in a spontaneous emission acceleration factor of around 2.6, and we achieve a g(2)(0) as low as 0.03±0.02 and post-selected two-photon interference visibility of 51.7% ± 3.2% for the single-photon source. This demonstration shows the potential of the GaAs-on-insulator platform for scalable on-chip quantum information processing
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hal-04750896 , version 1 (30-10-2024)

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Yueguang Zhou, Yuhui Yang, Imad Limame, Priyabrata Mudi, Marcel Hohn, et al.. Microresonator-enhanced quantum dot single-photon emission in GaAs-on-insulator platform. Materials for Quantum Technology, 2024, 4 (4), pp.045401. ⟨10.1088/2633-4356/ad88cb⟩. ⟨hal-04750896⟩
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