Communication Dans Un Congrès Année : 2024

Stabilization of low dimensional ferroelectric HfZrO2 film

Greta Segantini
Benoît Manchon
  • Fonction : Auteur
  • PersonId : 1103699
Jordan Bouaziz
Damien Deleruyelle
Sara Gonzalez
Grégoire Magagnin
Pedro Rojo Romeo

Résumé

Hafnium zirconium oxide (HZO) is an ideal candidate for the implementation of ferroelectric memristive devices, due to its compatibility with the complementary metal‐oxide‐semiconductor technology. Ferroelectricity in HZO films is significantly influenced by the properties of electrode/HZO interfaces. Here, the impact of the interfacial microstructure and chemistry on the ferroelectricity of 6 nm‐thick HZO‐based capacitors, realized by sputtering, with titanium nitride or tungsten electrode materials, is investigated. The results highlight a strong correlation between the structural properties of electrode/HZO interfaces and the HZO ferroelectric performance. Interface effects become significant at low HZO thickness, thus the precise control over the quality of electrode/HZO interfaces allows the remarkable improvement of HZO ferroelectric properties. A double remanent polarization of 40 µC/cm² is achieved. This work is a new step towards high quality low dimensional HZO films with enhanced ferroelectricity.

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Dates et versions

hal-04749755 , version 1 (23-10-2024)

Identifiants

  • HAL Id : hal-04749755 , version 1

Citer

Greta Segantini, Benoît Manchon, Jordan Bouaziz, Damien Deleruyelle, Infante Ingrid C., et al.. Stabilization of low dimensional ferroelectric HfZrO2 film. International Workshop on Emergent Phenomena in Low-Dimensional Ferroelectric Structures, Helmholtz-Zentrum Berlin, Jun 2024, Berlin, Germany. ⟨hal-04749755⟩
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