Internal radiation effect on semiconductor β-Ga2O3 crystals grown by the VB Method and anisotropic thermal stress - Archive ouverte HAL
Article Dans Une Revue Journal of Crystal Growth Année : 2024
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hal-04745726 , version 1 (21-10-2024)

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Azeddine Chayab Draa, Faiza Mokhtari, Idir Lasloudji, Samir Zermout, Kheirreddine Lebbou. Internal radiation effect on semiconductor β-Ga2O3 crystals grown by the VB Method and anisotropic thermal stress. Journal of Crystal Growth, 2024, 648, pp.127910. ⟨10.1016/j.jcrysgro.2024.127910⟩. ⟨hal-04745726⟩
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