Article Dans Une Revue The Journal of Chemical Physics Année : 2024

Near-infrared–terahertz hyper-Raman spectroscopy of an excited silicon surface

Spectroscopie Hyper-Raman proche infra-rouge terahertz d'une surface excitée de silicium

Résumé

We recorded the hyper-Raman spectra resulting from the interaction of a near-infrared (near-IR) picosecond pulse and a terahertz (THz) ultrashort pulse at the surface of a (111) silicon sample. A simple model is proposed to analyze the evolution of the hyper-Raman spectra vs the time delay between the near-IR and THz pulses. It links the hyper-Raman spectra to the multi-phonon absorption in silicon. This approach makes it possible to demonstrate that, during carrier generation by the near-IR pulse, the two-phonon and three-phonon absorption bands are enhanced in modes involving optical phonons. This process results from the very rapid and strong population of the optical phonons induced by the photo-generated hot carriers. It occurs over a few hundreds of femtoseconds and lasts throughout the duration of the near-IR pulse.

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Dates et versions

hal-04742035 , version 1 (17-10-2024)

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L. Dalstein, M. Tondusson, M. Kristensen, E. Abraham, J. Degert, et al.. Near-infrared–terahertz hyper-Raman spectroscopy of an excited silicon surface. The Journal of Chemical Physics, 2024, 161 (15), pp.154708. ⟨10.1063/5.0230655⟩. ⟨hal-04742035⟩
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