High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network - Archive ouverte HAL
Article Dans Une Revue Physica Status Solidi A (applications and materials science) Année : 2024

High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network

Résumé

With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W −1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s −1 capacity and above.
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Dates et versions

hal-04739549 , version 1 (16-10-2024)

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Risab Gnanamani, Hervé Bertin, Claire Besancon, Karim Mekhazni, Christophe Caillaud, et al.. High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network. Physica Status Solidi A (applications and materials science), 2024, 221 (13), ⟨10.1002/pssa.202300648⟩. ⟨hal-04739549⟩
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