Direct growth of gasb on Ge, Ge-On-Si and SIGE-On-Si platforms for integrated MID infra-red photonics
Résumé
We study the growth of GaSb on germanium-based platforms for mid-infrared photonics. Anti-phase domain are buried in a 500 nm GaSb buffer layer on Ge and Ge- on-Si templates thanks to slightly miscut substrates or chemicaly-mechanicaly polished surfaces.
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