%0 Journal Article
%T Direct liquid injection pulsed-pressure MOCVD of large area MoS 2 on Si/SiO 2
%+ Annealsys (Annealsys)
%+ Laboratoire Charles Coulomb (L2C)
%+ Design de Matériaux Membranaires et systèmes Multifonctionnels (DM3)
%A Astié, Vincent
%A Wasem Klein, Felipe
%A Makhlouf, Houssin
%A Paillet, Matthieu
%A Huntzinger, Jean-Roch
%A Sauvajol, Jean-Louis
%A Zahab, Ahmed Azmi
%A Juillaguet, Sandrine
%A Contreras, Sylvie
%A Voiry, Damien
%A Landois, Périne
%A Decams, Jean-Manuel
%Z Occitania region in the frame of project DIMENSION N°2018-003267 under the program “Recherche et Société(s)”.
%< avec comité de lecture
%@ 1463-9076
%J Physical Chemistry Chemical Physics
%I Royal Society of Chemistry
%V 26
%N 40
%P 25772-25779
%8 2024
%D 2024
%R 10.1039/D4CP00603H
%Z Chemical SciencesJournal articles
%X Large-scale, high-quality growth of transition metal dichalcogenides (TMD) of controlled thickness is paramount for many applications in opto- and microelectronics. This paper describes the direct growth of well-controlled large area molybdenum disulfide (MoS2) on Si/SiO2 substrates by direct liquid injection pulsed-pressure metal–organic chemical vapor deposition (DLI-PP-MOCVD) using low-toxicity precursors. It is shown that control of the deposited thickness can be achieved by carefully tuning the amount of molybdenum precursor evaporated and that continuous layers are routinely obtained. Homogeneity and reproducibility have also been examined, as well as the average size of the grains. When targeting monolayer thickness, the MoS2 showed near stoichiometry (S/Mo = 1.93–1.95), low roughness and high photoluminescence (PL) quantum yield, equivalent to exfoliated monolayers and CVD MoS2 grown on the same substrates.
%G English
%2 https://hal.science/hal-04734922v1/document
%2 https://hal.science/hal-04734922v1/file/DLI-hal.pdf
%L hal-04734922
%U https://hal.science/hal-04734922
%~ CNRS
%~ UNIV-MONTP2
%~ ENSC-MONTPELLIER
%~ IEM
%~ L2C
%~ LORIA2
%~ INC-CNRS
%~ CHIMIE
%~ UNIV-MONTPELLIER
%~ UM-2015-2021
%~ UM-EPE