Hot N2+-He+ co-implantation for NV doped layer creation near diamond surfaces - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

Hot N2+-He+ co-implantation for NV doped layer creation near diamond surfaces

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hal-04722922 , version 1 (06-10-2024)

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  • HAL Id : hal-04722922 , version 1

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Midrel Wilfried Ngandeu Ngambou, Pauline Perrin, Ovidiu Brinza, Vianney Mille, Audrey Valentin, et al.. Hot N2+-He+ co-implantation for NV doped layer creation near diamond surfaces. International Conference on Diamond and Carbon Materials 2024 (ICDCM 2024), Sep 2024, Dresden, Germany. ⟨hal-04722922⟩
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