Optimization of the melt and quench behavior of phase-change RF switch to improve power handling
Résumé
This paper presents two methods to improve the reliability and the melting/quench behavior of phase change materials (PCM) used in radiofrequency (RF) switches. Results show benefits of the addition of an aluminum nitride heat spreading layer and the reduction of the distance between the substrate and the PCM. The reduction of the PCM cooling time shown in simulations and the power handling improvement observed in measurements on series structures support our proposed designs of GeTe based switches with RF gaps lengths over 4µm, allowing the power handling going to reach 31dBm in both ON and OFF states.
Domaines
Electronique| Origine | Fichiers produits par l'(les) auteur(s) |
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