The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics - Archive ouverte HAL
Article Dans Une Revue Advanced Functional Materials Année : 2024

The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics

Huichen Zhang
Erwan Bossavit
Philippe Guyot-Sionnest
Sean Keuleyan
  • Fonction : Auteur
Xin Tang
Andrey Rogach

Résumé

Abstract Among materials produced as colloidal quantum dots (CQDs), HgTe has a special status being the only material covering the whole infrared range from the visible to the THz (0.7–100 µm). This unique property resulting from its electronic structure, combined with an air stability and a capacity for charge conduction has generated consistent and massive efforts to produce and improve HgTe CQDs over the past two decades. Meanwhile, HgTe CQDs offer an infrared platform more advanced than any other colloidal alternatives in the mid‐wave infrared regarding their integration into advanced photonic and optoelectronic applications. Here, the latest developments of HgTe CQDs relative to the material's growth, electron structure modelling, its integration into photonic structures and its transfer as the active material from single element devices toward complex sensors and infrared imagers are reviewed. Finally, a discussion about the potential of this material for industry, rising new challenges beyond economical and production considerations at low technological readiness level, relative to the material and device design, is also included.
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hal-04715200 , version 1 (30-09-2024)

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Kseniia Sergeeva, Huichen Zhang, Arsenii Portniagin, Erwan Bossavit, Ge Mu, et al.. The Rise of HgTe Colloidal Quantum Dots for Infrared Optoelectronics. Advanced Functional Materials, 2024, 34, pp.2405307. ⟨10.1002/adfm.202405307⟩. ⟨hal-04715200⟩
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