Equivalent Circuit Model of RF Power Detection with AlGaN/GaN HEMTs up to 67 GHz
Résumé
The responsivity of zero-bias detectors based on high electron mobility transistors (HEMTs) is studied using measurements up to 67 GHz and a complete small-signal equivalent circuit (SSEC) model, together with a closed-form analytical expression, is used to reproduce the experimental results. The frequency response in drain injection configuration is analyzed as a function of the equivalent circuit elements and the gate bias. The values of the intrinsic and extrinsic elements of the device are compared with those obtained with Monte Carlo simulations of the intrinsic region of the device, showing a very good agreement.
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2024_URSI - Equivalent Circuit Model of RF Power Detection (authors).pdf (2.31 Mo)
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