Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
Résumé
The responsivity of microwave zero-bias detectors based on GaN high electron mobility transistors (HEMTs) is measured up to 110 GHz. A compact model based on static coefficients extracted from the DC output curves together with Sparameter measurements is able to replicate the detection results both when the radio-frequency power is fed into the drain or the gate terminals. A detailed analysis of the contribution of the gate-drain coupling to the RF responsivity allows to identify the origin of the frequency roll-off when shrinking the gate-size of the transistors.
Fichier principal
2023_InMMIC - Responsivity_Measurements_up_to_110 (authors).pdf (1.95 Mo)
Télécharger le fichier
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|