THZ coherent source based on light structuration using III-V semiconductor laser technology - Archive ouverte HAL
Poster De Conférence Année : 2024

THZ coherent source based on light structuration using III-V semiconductor laser technology

Résumé

THz photonics-based sources are attractive as they offer room-temperature solutions that rely on mature photonics technology and provide broadband tunability and large modulation bandwidth to address specific THz applications such as high-data-rate communications or spectroscopy. In this work we present a laser source based on GaAs semiconductor technology for THz applications. We have developed a continuous wave optically-pumped Vertical-External-Cavity Surface-Emitting Laser (VECSEL). It is possible to have a THz emission thanks to beating of two different Laguerre-Gauss (LG) transversal modes using a photoconductive antennas (PCA) as a photomixer, so it is necessary to select only two modes where the frequencies difference is in THz regime. We demonstrate THz emission using plasmonic-electrodes PCA optically-pumped at 1064 nm.

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Dates et versions

hal-04710908 , version 1 (26-09-2024)

Identifiants

  • HAL Id : hal-04710908 , version 1

Citer

Mohamed Nadrani, Adrián Bartolo, Baptiste Chomet, Jean-Paul Guillet, Ping-Keng Lu, et al.. THZ coherent source based on light structuration using III-V semiconductor laser technology. Optique Normandie 2024, Jul 2024, Rouen, France. . ⟨hal-04710908⟩
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