Impact of gate metallization for Total Ionizing Dose Testing of MOS capacitors - Archive ouverte HAL
Poster De Conférence Année : 2024
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hal-04709685 , version 1 (25-09-2024)

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  • HAL Id : hal-04709685 , version 1

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V. Girones, J. Boch, D. Lambert, F. Saigné, T. Maraine, et al.. Impact of gate metallization for Total Ionizing Dose Testing of MOS capacitors. IEEE Radecs 2024. (RADiation Effects on Components and Systems), Sep 2024, Maspalomas (SPAIN), Spain. ⟨hal-04709685⟩
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