Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor - Archive ouverte HAL
Article Dans Une Revue Solid State Phenomena Année : 2024

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Mihai Lazar
Hervé Morel

Résumé

In this paper, a first demonstration of the optical triggering about a 10 kV 4H-SiC Bipolar Junction Transistor is reported. A laser emitting UV (349 nm) has been used for the generation electron-hole pairs within the device. A current density about 20 A.cm-2 has been obtained. This low value in comparison with 100 A.cm-2 for “conventional” BJT is due to the low pulse width (5 ns). The current waveform shows the effect of the carrier lifetime in the base and collector regions. From these measurements, we have extracted the IC (VCE) characteristics for different laser power and the switch-on time which is about 1 µs.
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Dates et versions

hal-04677726 , version 1 (26-08-2024)

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Pierre Brosselard, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, et al.. Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor. Solid State Phenomena, 2024, 360, pp.127-131. ⟨10.4028/p-sj87Lx⟩. ⟨hal-04677726⟩
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