Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique - Archive ouverte HAL
Article Dans Une Revue Solid State Phenomena Année : 2024

Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique

Résumé

This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P+ rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure
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Dates et versions

hal-04677706 , version 1 (26-08-2024)

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Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, Pierre Brosselard, et al.. Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique. Solid State Phenomena, 2024, 360, pp.119-125. ⟨10.4028/p-d65YuN⟩. ⟨hal-04677706⟩
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