Visualization of P+ JTE embedded rings used for peripheral protection of high voltage Schottky diodes by the Optical Beam Induced Current (OBIC) technique
Résumé
This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P+ rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure
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