Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas - Archive ouverte HAL
Poster De Conférence Année : 2023

Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas

Résumé

Plasma etching of Ge-Sb-Se materials in methane-based mixtures for photonic applications and advanced microelectronics.

Fichier principal
Vignette du fichier
CARDINAUD_Poster_ISPC25.pdf (3.26 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04675793 , version 1 (22-08-2024)

Identifiants

  • HAL Id : hal-04675793 , version 1

Citer

Thibaut Meyer, Aurélie Girard, Christophe Cardinaud, Marek Bouška, Emeline Baudet, et al.. Investigation of plasma species, etch products and surface modification during etching of Ge, Sb and Se-based materials in CH 4 -H 2 -Ar plasmas. 25th International Symposium on Plasma Chemistry (ISPC25), May 2023, Kyoto, Japan. ⟨hal-04675793⟩
20 Consultations
10 Téléchargements

Partager

More