Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs
Résumé
In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high ION/IOFF (~109) ratio and a significantly small gate leakage current (10−11 A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench bottom and trench channel were extracted accurately by taking into account different charging conditions. This methodology enabled an estimation of the effective channel and bottom mobility of 11.1 cm2/V·s and 15.1 cm2/V·s, respectively.
Domaines
Sciences de l'ingénieur [physics]| Origine | Publication financée par une institution |
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