Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE - Archive ouverte HAL
Article Dans Une Revue Crystal Growth & Design Année : 2024

Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE

Philippe Vennéguès
  • Fonction : Auteur
Pierre-Marie Coulon
  • Fonction : Auteur
Philip Shields
Jesus Zúñiga-Pérez
Maria Tchernycheva
Christophe Durand
Blandine Alloing
  • Fonction : Auteur

Résumé

Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the nonsinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here, we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding Josephson field-effect transistors fabricated from a SiGe/Ge/SiGe heterostructure grown on a 200-mm silicon wafer. The single-junction CPR shows up to three harmonics with gate-tunable amplitude. In the presence of microwave irradiation, the ratio of the first two dominant harmonics, corresponding to single and double Cooper-pair transport processes, is consistently reflected in relative weight of integer and half-integer Shapiro steps. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27% asymmetry to a π -periodic Josephson regime suitable for the implementation of parity-protected superconducting qubits. These results illustrate the potential of Ge-based hybrid devices as versatile and scalable building blocks of superconducting quantum circuits.
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Dates et versions

hal-04670011 , version 1 (25-09-2024)

Identifiants

Citer

Julien Bosch, Philippe Vennéguès, Pierre-Marie Coulon, Philip Shields, Jesus Zúñiga-Pérez, et al.. Time-Periodic Markers Revealing the Growth Mechanism of GaN Nanowires by Si-Assisted MOVPE. Crystal Growth & Design, 2024, 24 (15), pp.6373-6380. ⟨10.1021/acs.cgd.4c00615⟩. ⟨hal-04670011⟩
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