In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process (PEELER) - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process (PEELER)

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Dates et versions

hal-04659864 , version 1 (23-07-2024)

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  • HAL Id : hal-04659864 , version 1

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Abderaouf Boucherif. In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process (PEELER). TOP-SET, Jul 2022, Ottawa, Canada. ⟨hal-04659864⟩
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