In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process - Archive ouverte HAL
Communication Dans Un Congrès Année : 2022

In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process

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Sciences de l'ingénieur [physics]

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https://hal.science/hal-04659820

Soumis le : mardi 23 juillet 2024-13:04:06

Dernière modification le : mardi 30 juillet 2024-20:27:37

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hal-04659820 , version 1 (23-07-2024)

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  • HAL Id : hal-04659820 , version 1

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Abderaouf Boucherif. In-Situ TEM observation of Oswald ripening in germanium growth on freestanding graphene and its application to wafer scale layer transfer process. Workshop on Advanced Epitaxy for Freestanding Membranes and 2D Materials (AFEM), Jul 2022, Cambridge (MA), United States. ⟨hal-04659820⟩

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