1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications - Archive ouverte HAL Accéder directement au contenu
Proceedings/Recueil Des Communications Année : 2023

1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications

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hal-04654846 , version 1 (20-07-2024)

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Hussein Hamieh, Juliano Borges, Étienne Paradis, Yann Beilliard, Serge Ecoffey, et al.. 1.65 ¼m L/S high density interconnect on organic substrate by advanced semi-additive process for HPC applications. 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), IEEE, pp.629-634, 2023, ⟨10.1109/ECTC51909.2023.00111⟩. ⟨hal-04654846⟩
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