Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Guy Tsamo; Alla Nastovjak; Nataliya Shwartz; Philip Hoggan; Christine Robert-Goumet; Alberto Pimpinelli; Matthieu Petit; Alain Ranguis; Emmanuel Gardes; Mamour Sall; Luc Bideux; Guillaume Monier

doi:10.1021/acs.jpcc.3c07945

Journal Articles Journal of Physical Chemistry C Year : 2024

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

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Guy Tsamo

Function : Author

Alla Nastovjak

Function : Author
PersonId : 1399722
ORCID : 0000-0003-1607-4955

Nataliya Shwartz

Function : Author

Philip Hoggan

Function : Author
PersonId : 1038525
ORCID : 0000-0002-2543-5823
IdRef : 191222631

Christine Robert-Goumet

Function : Author

Alberto Pimpinelli

Function : Author
PersonId : 1322536
IdHAL : alberto-pimpinelli
ORCID : 0000-0002-3237-9807

Institut Pascal

Rice University [Houston]

University of Maryland System

Matthieu Petit

Function : Author
PersonId : 2949
IdHAL : mpetit
ORCID : 0000-0003-3267-9938
IdRef : 08208887X

Centre Interdisciplinaire de Nanoscience de Marseille

Polytech Marseille

CV

Alain Ranguis

Function : Author

Emmanuel Gardes

Function : Author

Mamour Sall

Function : Author

Luc Bideux

Function : Author
PersonId : 1322408
IdHAL : luc-bideux
ORCID : 0000-0002-7280-8565

Institut Pascal

Guillaume Monier

Function : Author
PersonId : 750239
IdHAL : guillaume-monier
ORCID : 0000-0002-2368-3110
IdRef : 158623703

Institut Pascal

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Physics [physics]

luc bideux : Connect in order to contact the contributor

https://hal.science/hal-04643647

Submitted on : Wednesday, July 10, 2024-3:31:26 PM

Last modification on : Thursday, July 11, 2024-3:22:44 AM

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hal-04643647 , version 1 (10-07-2024)

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HAL Id : hal-04643647 , version 1
DOI : 10.1021/acs.jpcc.3c07945

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Guy Tsamo, Alla Nastovjak, Nataliya Shwartz, Philip Hoggan, Christine Robert-Goumet, et al.. Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations. Journal of Physical Chemistry C, 2024, 128 (12), pp.5168-5178. ⟨10.1021/acs.jpcc.3c07945⟩. ⟨hal-04643647⟩

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Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

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