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Communication Dans Un Congrès Année : 2024

Carrier density analysis in stressed n-doped GaN layers on sapphire

Résumé

Using micro-Raman spectroscopy on MOCVD slightly n-doped GaN on sapphire structures (1.5 x 10$^{15}$ cm$^{-3}$ – 6.5 x 10$^{15}$ cm$^{-3}$), we report a method to dissociate biaxial stress contribution from n carrier concentration contribution in A1(LO) Raman peak position. For all characterized samples, the main Raman peaks A$_1$(LO) and E$_2^H$ exhibit a linear dependency with a slope of ~1 due to biaxial stress and the intercept of the linear regression increases as n carrier density locally increases.

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Electronique
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Dates et versions

hal-04639487 , version 1 (09-07-2024)

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  • HAL Id : hal-04639487 , version 1

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Ndembi Ignoumba-Ignoumba, Camille Sonneville, Éric Frayssinet, Adrien Bidaud, Florian Bartoli, et al.. Carrier density analysis in stressed n-doped GaN layers on sapphire. GaN Marathon, Jun 2024, Vérone, Italy. ⟨hal-04639487⟩
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