On the electrochemical growth of a crystalline p‐n Junction from aqueous solutions - Archive ouverte HAL
Article Dans Une Revue Chemistry - A European Journal Année : 2024

On the electrochemical growth of a crystalline p‐n Junction from aqueous solutions

Résumé

Our society largely relies on inorganic semiconductor devices which are, so far, fabricated using expensive and complex processes requiring ultra-high vacuum equipment. Here we report on the possibility of growing a p-n junction taking advantage of electrochemical processes based on the use of aqueous solutions. The growth of the junction has been carried out using the Electrochemical Atomic Layer Deposition (E-ALD) technique, which allowed to sequentially deposit two different semiconductors, CdS and Cu2S, on an Ag(111) substrate, in a single procedure. The growth process was monitored in situ by Surface X-Ray Diffraction (SXRD) and resulted in the fabrication of a thin double-layer structure with a high degree of crystallographic order and a well-defined interface. The high-performance electrical characteristics of the device were analysed ex-situ and show the characteristic feature of a diode.

Domaines

Matériaux
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Dates et versions

hal-04607039 , version 1 (04-10-2024)

Identifiants

Citer

Roberto Felici, Tommaso Baroni, Francesco Carlà, Nicola Cioffi, Francesco Di Benedetto, et al.. On the electrochemical growth of a crystalline p‐n Junction from aqueous solutions. Chemistry - A European Journal, 2024, 30 (42), pp.e202401403. ⟨10.1002/chem.202401403⟩. ⟨hal-04607039⟩
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