Journal Articles ACS Nano Year : 2022

Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating

Hyeon Han
Arpit Sharma
  • Function : Author
Holger Meyerheim
  • Function : Author
Jiho Yoon
  • Function : Author
Hakan Deniz
  • Function : Author
Kun-Rok Jeon
Ankit Sharma
  • Function : Author
Katayoon Mohseni
  • Function : Author
Manuel Valvidares
Pierluigi Gargiani
Stuart Parkin

Abstract

Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO3-δ (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO2.5 (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film’s surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices.
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hal-04592844 , version 1 (18-10-2024)

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Hyeon Han, Arpit Sharma, Holger Meyerheim, Jiho Yoon, Hakan Deniz, et al.. Control of Oxygen Vacancy Ordering in Brownmillerite Thin Films via Ionic Liquid Gating. ACS Nano, 2022, 16 (4), pp.6206-6214. ⟨10.1021/acsnano.2c00012⟩. ⟨hal-04592844⟩
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