Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nature Communications Année : 2024

Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures

Résumé

Abstract The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 – 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from − 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.

Dates et versions

hal-04590389 , version 1 (28-05-2024)

Identifiants

Citer

Boxuan Yang, Bibek Bhujel, Daniel Chica, Evan Telford, Xavier Roy, et al.. Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures. Nature Communications, 2024, 15 (1), pp.4459. ⟨10.1038/s41467-024-48809-w⟩. ⟨hal-04590389⟩
6 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More