Tunnel Diode-based Harmonic Backscatter Amplifier - Archive ouverte HAL
Communication Dans Un Congrès Année : 2024

Tunnel Diode-based Harmonic Backscatter Amplifier

Résumé

Harmonic backscattering is an attractive technique in very-low power communication scheme. The hardware implementation is extremely simple due to the absence of selfjamming issue (as compared to fundamental backscattering communication) and it can even allow full-duplex communication. Unfortunately, the conversion power losses from fundamental to harmonic frequency is hampering the communication distance. This paper reports a tunnel diode-based reflection amplifier used in its nonlinear negative resistance region. Measured under an input power of -60dBm, it has a 33dB gain, which can enhance the communication distance by a factor of 5.6. The amplifier operate under 200mV voltage supply, which can easily be provided by ambient RF energy harvesting.

Domaines

Electronique
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Dates et versions

hal-04559984 , version 1 (26-04-2024)

Identifiants

  • HAL Id : hal-04559984 , version 1

Citer

Karan Gumber, Corinne Dejous, Simon Hemour. Tunnel Diode-based Harmonic Backscatter Amplifier. 2024 IEEE International Symposium on Antennas and Propagation and ITNC-USNC-URSI Radio Science Meeting, Jul 2024, Florence, Italy. ⟨hal-04559984⟩
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