NGD Analysis of Defected Ground and SIW-Matched Structure - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Chinese Journal of Electronics Année : 2023

NGD Analysis of Defected Ground and SIW-Matched Structure

Taochen Gu
  • Fonction : Auteur
Fayu Wan
  • Fonction : Auteur
Junxiang Ge
  • Fonction : Auteur
Lalléchère Sébastien
  • Fonction : Auteur
Rahajandraibe Wenceslas
  • Fonction : Auteur
Rahajandraibe Wenceslas
Ravelo Blaise
  • Fonction : Auteur

Résumé

An innovative design of bandpass (BP) negative group delay (NGD) passive circuit based on defect ground structure (DGS) is developed in the present paper. The NGD DGS topology is originally built with notched cells associated with self-matched substrate waveguide elements. The DGS design method is introduced as a function of the geometrical notched and substrate integrated waveguide via elements. Then, parametric analyses based on full wave 3-D electromagnetic S-parameter simulations were considered to investigate the influence of DGS physical size effects. The design method feasibility study is validated with fully distributed microstrip circuit prototype. Significant BP NGD function performances were validated with 3-D simulations and measurements with -1.69 ns NGD value around 2 GHz center frequency over 33.7 MHz NGD bandwidth with insertion loss better than 4 dB and reflection loss better than 40 dB.
Fichier principal
Vignette du fichier
IEEE TEMC_self-matched DGS_NGD.pdf (716.42 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-04528756 , version 1 (02-04-2024)

Identifiants

Citer

Taochen Gu, Fayu Wan, Junxiang Ge, Lalléchère Sébastien, Rahajandraibe Wenceslas, et al.. NGD Analysis of Defected Ground and SIW-Matched Structure. Chinese Journal of Electronics, 2023, 32 (2), pp.343-352. ⟨10.23919/cje.2021.00.233⟩. ⟨hal-04528756⟩
0 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More