In situ growth of N-doped carbon nanotubes from the products of graphitic carbon nitride etching by nickel nanoparticles - Archive ouverte HAL
Article Dans Une Revue Nanoscale Advances Année : 2024

In situ growth of N-doped carbon nanotubes from the products of graphitic carbon nitride etching by nickel nanoparticles

Résumé

The in situ growth of N-doped multi-walled carbon nanotubes (N-MWCNTs) from the products of graphitic carbon nitride (g-C$_3$N$_4$) etching by Ni nanoparticles in a hydrogen atmosphere has been confirmed for the first time. During the etching process of g-C$_3$N$_4$, the building blocks, notably methane, ammonia, and hydrogen cyanide, are formed. The formation of N-MWCNTs was confirmed by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning (SEM) and transmission electron microscopy (TEM). A sponge-like carbonaceous structure was obtained with a specific surface area of 384 m$^2$ g$^{-1}$ from initial g-C$_3$N$_4$ (32 m$^2$ g$^{-1}$).

Domaines

Matériaux
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Dates et versions

hal-04500515 , version 1 (29-08-2024)

Identifiants

Citer

Mariusz Pietrowski, Emilia Alwin, Michał Zieliński, Sabine Szunerits, Agata Suchora, et al.. In situ growth of N-doped carbon nanotubes from the products of graphitic carbon nitride etching by nickel nanoparticles. Nanoscale Advances, 2024, 6, pp.1720-1726. ⟨10.1039/D3NA00983A⟩. ⟨hal-04500515⟩
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