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Communication Dans Un Congrès Année : 2024

fT extraction of HEMT transistors at mm-waves through EM-simulated de-embedding devices

Résumé

De-embedding structures (transmission lines, open, short) are costly, whether in terms of silicon area or measurement time. In addition, they lead to measurement inaccuracies increasing with frequency in the millimeter-wave bands. In this paper, we show the possibility to perform de-embedding of HEMT transistors measurements through EM simulations in order to extract the unity-gain cut-off frequency (fT). Only an open must be measured to calibrate the EM simulation. Several de-embedding techniques are studied and compared up to 67 GHz, based on measurements or EM simulations. The agreement for the extraction of fT between measured or EM-simulated de-embedding structures validates the proposed approach.

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Dates et versions

hal-04487746 , version 1 (04-03-2024)

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Paternité - Pas d'utilisation commerciale

Identifiants

Citer

Mohammed Medbouhi, José Lugo-Alvarez, Philippe Ferrari, Erwan Morvan. fT extraction of HEMT transistors at mm-waves through EM-simulated de-embedding devices. IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2024), Jan 2024, San Antonio (TX), United States. ⟨10.1109/SiRF59913.2024.10438528⟩. ⟨hal-04487746⟩
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