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Article Dans Une Revue Optical Materials Express Année : 2024

GaN/AlN bilayers for integrated photonics

Résumé

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultraviolet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for photonic circuits. Quality factors up to 410,000 are demonstrated with microring resonators in the near-infrared spectral range. We emphasize the peculiar advantages of these bilayers for nonlinear photonics: GaN offers a larger nonlinear susceptibility as compared to AlN. More importantly, both materials exhibit nonlinear susceptibilities with opposite signs that can be advantageous for nonlinear conversion. Thick epitaxial III-nitride bilayers are associated with the occurrence of cracks in the epi-layers and multimode waveguide propagation. We show that the multimode character can lead to peculiar resonance line shapes with the capacity to control full transmission and reflection by phase engineering.
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Origine : Publication financée par une institution
Licence : CC BY - Paternité

Dates et versions

hal-04484997 , version 1 (01-03-2024)

Licence

Paternité

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Nagesh Bhat, Maksym Gromovyi, Moustafa El Kurdi, Xavier Checoury, Benjamin Damilano, et al.. GaN/AlN bilayers for integrated photonics. Optical Materials Express, 2024, 14 (3), pp.792. ⟨10.1364/ome.515887⟩. ⟨hal-04484997⟩
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