Possibilities and Limits of Edge-coupled InGaAs/InP Heterojunction Phototransistors for Millimetric Applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 1999

Possibilities and Limits of Edge-coupled InGaAs/InP Heterojunction Phototransistors for Millimetric Applications

Résumé

We present the modeling and optimization of edge-coupled waveguide InGaAs/InP HPTs for microwave and millimeter wave applications. These devices can be used as photodetectors and for optical-optical mixing or electro-optical mixing. We aim to use them for optical control of microwave oscillator.
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hal-04458262 , version 1 (14-02-2024)

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  • HAL Id : hal-04458262 , version 1

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Vincent Magnin, Joseph Harari, Manuel Fendler, Jean-Pierre Vilcot, Didier Decoster. Possibilities and Limits of Edge-coupled InGaAs/InP Heterojunction Phototransistors for Millimetric Applications. 11th III-V Semiconductor Device Simulation Workshop, IEMN, May 1999, Lille, France. ⟨hal-04458262⟩
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