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              <p>Dislocations are ubiquitous topological defects in charge density waves crystals. We present exact analytical calculation of the scattering intensity profile for a random array of dislocations which is performed within a generic vortex limit. We add results of numerical studies for a complete model which allows for variations of the amplitude, down to the zero at the dislocation core, including interactions with the electric field and normal carriers.</p>
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