S-parameters characterization of GaN power transistors for high frequency power converters design
Résumé
Gallium Nitride (GaN) power devices that have been developed these recent years are ideals candidates for high frequency power conversion, leading to a reduction of size, cost and weight of power converters. This work presents a new modeling methodology of GaN power transistors based on radiofrequency characterizations in order to design efficient high frequency high power converters. The characterization of extrinsic and intrinsic device's parasitic up to the gigahertz range using 2-port S-parameters measurements and characterization fixtures designed on printed circuit boards is presented in this paper.
Origine | Fichiers produits par l'(les) auteur(s) |
---|