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Communication Dans Un Congrès Année : 2018

S-parameters characterization of GaN power transistors for high frequency power converters design

Résumé

Gallium Nitride (GaN) power devices that have been developed these recent years are ideals candidates for high frequency power conversion, leading to a reduction of size, cost and weight of power converters. This work presents a new modeling methodology of GaN power transistors based on radiofrequency characterizations in order to design efficient high frequency high power converters. The characterization of extrinsic and intrinsic device's parasitic up to the gigahertz range using 2-port S-parameters measurements and characterization fixtures designed on printed circuit boards is presented in this paper.

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hal-04443970 , version 1 (07-02-2024)

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  • HAL Id : hal-04443970 , version 1

Citer

Loris Pace, Nicolas Defrance, Arnaud Videt, Nadir Idir, Jean-Claude de Jaeger. S-parameters characterization of GaN power transistors for high frequency power converters design. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2018, Jun 2018, Nuremberg, Germany. pp.913-920. ⟨hal-04443970⟩
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