InGaAs/Ga(As)Sb nanoscale tunnel junctions grown by selective area molecular beam epitaxy - Archive ouverte HAL
Communication Dans Un Congrès Année : 2021

InGaAs/Ga(As)Sb nanoscale tunnel junctions grown by selective area molecular beam epitaxy

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hal-04440037 , version 1 (05-02-2024)

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  • HAL Id : hal-04440037 , version 1

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Alexandre Bucamp, Christophe Coinon, Sylvie Lepilliet, David Troadec, Gilles Patriarche, et al.. InGaAs/Ga(As)Sb nanoscale tunnel junctions grown by selective area molecular beam epitaxy. Compound Semiconductor Week 2021, CSW 2021, May 2021, Stockholm (Suède), Sweden. ⟨hal-04440037⟩
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