Towards High Performance Fully Vertical GaN-on-Silicon PIN Diodes
Résumé
In this work, we demonstrate quasi and fully vertical PIN GaN on Si diodes with a low on state resistance of 0.35 mΩ.cm² and high average electric field of 1.82 MV/cm, which is favorably comparable to the state-of-the-art considering the absence of edge termination or field plates. The breakdown voltage scales well with the drift layer thickness of 3.5 µm and 4.5 µm resulting in hard breakdown values exceeding 800 V. The achieved results are promising towards kVolt-class fully vertical GaN-on-Silicon devices.
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