Single electron transistor: Energy-level broadening effect and thermionic contribution - Archive ouverte HAL
Journal Articles Fizika i tekhnika poluprovodnicov / Semiconductors Year : 2017

Single electron transistor: Energy-level broadening effect and thermionic contribution

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Physics [physics]

Bilel HAFSI  : Connect in order to contact the contributor

https://hal.science/hal-04422385

Submitted on : Sunday, January 28, 2024-6:39:18 PM

Last modification on : Tuesday, June 4, 2024-1:26:03 PM

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hal-04422385 , version 1 (28-01-2024)

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A. Nasri, A. Boubaker, W. Khaldi, Bilel Hafsi, A. Kalboussi. Single electron transistor: Energy-level broadening effect and thermionic contribution. Fizika i tekhnika poluprovodnicov / Semiconductors, 2017, 51 (12), pp.1656-1660. ⟨10.1134/S1063782617120144⟩. ⟨hal-04422385⟩

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