N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate - Archive ouverte HAL
Article Dans Une Revue Organic Electronics Année : 2017

N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate

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hal-04422357 , version 1 (28-01-2024)

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B. Hafsi, A. Boubaker, David Guérin, Stéphane Lenfant, A. Kalboussi, et al.. N-type polymeric organic flash memory device: Effect of reduced graphene oxide floating gate. Organic Electronics, 2017, 45, pp.81-88. ⟨10.1016/j.orgel.2017.02.035⟩. ⟨hal-04422357⟩
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