Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanophotonics Année : 2024

Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm

Résumé

This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime. High speed operation is obtained, up to 1.5 GHz. Furthermore, the device can also operate as an integrated photodetector. Photodetection has thus been characterized from 5.2 µm to 10 µm wavelengths showing an internal responsivity around 1 mA/W, and a 3 dB electro-optical bandwidth of 32 MHz. These results show a significant advancement in integrated photodetectors and electro-optical modulators for mid-infrared spectroscopy.
Fichier principal
Vignette du fichier
10.1515_nanoph-2023-0692.pdf (3.02 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Licence : CC BY - Paternité

Dates et versions

hal-04419849 , version 1 (26-01-2024)

Identifiants

Citer

Thi Hao Nhi Nguyen, Victor Turpaud, Natnicha Koompai, Jonathan Peltier, Stefano Calcaterra, et al.. Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm. Nanophotonics, 2024, ⟨10.1515/nanoph-2023-0692⟩. ⟨hal-04419849⟩
24 Consultations
3 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More