[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2023

[Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications

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Physique [physics] Sciences de l'ingénieur [physics]

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https://hal.science/hal-04397317

Soumis le : mardi 16 janvier 2024-12:16:00

Dernière modification le : mardi 4 juin 2024-13:26:03

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hal-04397317 , version 1 (16-01-2024)

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  • HAL Id : hal-04397317 , version 1

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Elodie Carneiro, Stéphanie Rennesson, Sebastian Tamariz, Lyes Ben Hammou, Kathia Harrouche, et al.. [Award] Sub-micron thick AlN/GaN-on-Si HEMTs grown by MBE with reduced trapping effects and superior blocking voltage for RF applications. 14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan. ⟨hal-04397317⟩

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