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Communication Dans Un Congrès Année : 2010

Simulation study of short-channel effects and quantum confinement in Double-Gate FinFET devices with high-mobility materials

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hal-04393626 , version 1 (14-01-2024)

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Mathieu Moreau, Daniela Munteanu, Jean-Luc Autran. Simulation study of short-channel effects and quantum confinement in Double-Gate FinFET devices with high-mobility materials. European-Material Research Society (E-MRS) 2010 Spring Meeting, Jun 2010, Strasbourg, France. ⟨hal-04393626⟩
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