Redox reaction enhanced Schottky contact at a LaNiO 3 (001)/Al interface - Archive ouverte HAL Accéder directement au contenu
Pré-Publication, Document De Travail (Preprint/Prepublication) Année : 2018

Redox reaction enhanced Schottky contact at a LaNiO 3 (001)/Al interface

B Berini
  • Fonction : Auteur
Y Dumont
  • Fonction : Auteur
P Nukala
  • Fonction : Auteur
B Dkhil
  • Fonction : Auteur

Résumé

Emergent phenomena at interfaces between oxides and metals can appear due to charge transfer and mass transport that modify the bulk properties. By coating the metallic oxide LaNiO 3 by aluminium, we fabricated a junction exhibiting a diode-like behaviour. At the equilibrium, the interface is insulating. The metallic behaviour can be recovered by applying a voltage drop across the junction in one polarity only. The electrical properties in direct and reverse bias are investigated. The observed electro-resistive effect rises up to 10 5 % and can be interpreted in terms of (i) a spontaneous redox reaction occurring at the interface and (ii) its reversal induced by charge injection in direct bias.
Fichier principal
Vignette du fichier
1804.07574.pdf (639.24 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Licence
Domaine public

Dates et versions

hal-04381581 , version 1 (09-01-2024)

Licence

Domaine public

Identifiants

  • HAL Id : hal-04381581 , version 1

Citer

J Scola, B Berini, Y Dumont, P Nukala, B Dkhil. Redox reaction enhanced Schottky contact at a LaNiO 3 (001)/Al interface. 2024. ⟨hal-04381581⟩
17 Consultations
21 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More