High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions
Résumé
We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (tMgO), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼67% at room temperature) have been observed with t$_{MgO}$=2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière’s model, can be understood in the framework of ab initio calculations.
Domaines
Matière Condensée [cond-mat]
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High TMR in epitaxial FeMgOFe tunnel junctions-4507_1_online.pdf (754.09 Ko)
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