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Article Dans Une Revue Journal of Applied Physics Année : 2022

Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields

Jean-Loïs Bello
Yassine Quessab
Jun-Wen Xu
Maxime Vergès
Héloïse Damas
Sébastien Petit-Watelot
Michel Hehn
Andrew Kent
Stéphane Mangin

Résumé

Switching of perpendicular magnetization via spin–orbit torque (SOT) is of particular interest in the development of non-volatile magnetic random access memory (MRAM) devices. We studied current-induced magnetization switching of Ir/GdFeCo/Cu/Pt heterostructures in a Hall cross geometry as a function of the in-plane applied magnetic field. Remarkably, magnetization switching is observed at zero applied field. This is shown to result from the competition between SOT, the Oersted field generated by the charge current, and the material's coercivity. Our results show a means of achieving zero-field switching that can impact the design of future spintronics devices, such as SOT-MRAM.
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Dates et versions

hal-04370022 , version 1 (02-01-2024)

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Jean-Loïs Bello, Yassine Quessab, Jun-Wen Xu, Maxime Vergès, Héloïse Damas, et al.. Field-free current-induced magnetization switching in GdFeCo: A competition between spin–orbit torques and Oersted fields. Journal of Applied Physics, 2022, 132 (8), ⟨10.1063/5.0091944⟩. ⟨hal-04370022⟩
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