Single laser pulse induced magnetization switching in in-plane magnetized GdCo alloys - Archive ouverte HAL
Article Dans Une Revue Physical Review B Année : 2023

Single laser pulse induced magnetization switching in in-plane magnetized GdCo alloys

Jun-Xiao Lin
Michel Hehn
Yi Peng
  • Fonction : Auteur
Junta Igarashi
Jon Gorchon
  • Fonction : Auteur
Julius Hohlfeld

Résumé

The discovery of all-optical ultrafast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. Previous studies on single pulse all-optical helicity-independent switching (AO-HIS) have mainly focused on perpendicularly magnetized thin films. This work presents a comprehensive study on AO-HIS for in-plane magnetized Gd x Co 100-x thin films. Deterministic single femtosecond laser pulse toggle magnetization switching is demonstrated in a wider concentration range (x = 10-25%) compared to the perpendicularly magnetized counterparts with GdCo thicknesses up to 30 nm. The switching time strongly depends on the Gd x Co 100-x concentration, with lower Gd concentration exhibiting shorter switching times (less than 500 fs). Our findings in this geometry provide insights into the underlying mechanisms governing single pulse AO-HIS, which challenge existing theoretical predictions. Moreover, in-plane magnetized Gd x Co 100-x thin films offer extended potential for optospintronic applications compared to their perpendicular magnetized counterparts.
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Dates et versions

hal-04369986 , version 1 (02-01-2024)

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Jun-Xiao Lin, Michel Hehn, Thomas Hauet, Yi Peng, Junta Igarashi, et al.. Single laser pulse induced magnetization switching in in-plane magnetized GdCo alloys. Physical Review B, 2023, 108 (22), pp.L220403. ⟨10.1103/PhysRevB.108.L220403⟩. ⟨hal-04369986⟩
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