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Communication Dans Un Congrès Année : 2013

Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

Davy Carole
Anthony Thomas
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Mihai Lazar

Résumé

Silicon carbide power devices are extremely attractive for high temperature applications. Many converters, based on SiC power devices, have been demonstrated to operate at ambient temperatures ranging from 200°C to 400°C. However, the power devices themselves are no longer the only limiting factor for the increase in operating temperature. Their packaging has become the main stumbling block for high-temperature, reliable operation. Different degradation phenomenon can be observed: fracture of the package during large thermal cycling (due to mismatch in the Coefficient of Thermal Expansion of the various materials), diffusion of chemical species, phase change...
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hal-04362529 , version 1 (28-12-2023)

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  • HAL Id : hal-04362529 , version 1

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Davy Carole, Arthur Vo-Ha, Anthony Thomas, Mihai Lazar, Nicolas Thierry Thierry-Jebali, et al.. Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport. ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p. ⟨hal-04362529⟩
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