(43.82 %, or 44.05 %)-Limiting Highest Efficiencies, Obtained Respectively in n+(p+)-p(n) Crystalline CdS-Junction Solar Cells at T=300K, Due to the Effects of Impurity Size Temperature, Heavy Doping, and Photovoltaic Conversion - Archive ouverte HAL
Article Dans Une Revue European Journal of Theoretical and Applied Sciences Année : 2023

(43.82 %, or 44.05 %)-Limiting Highest Efficiencies, Obtained Respectively in n+(p+)-p(n) Crystalline CdS-Junction Solar Cells at T=300K, Due to the Effects of Impurity Size Temperature, Heavy Doping, and Photovoltaic Conversion

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https://hal.science/hal-04361958

Soumis le : vendredi 22 décembre 2023-15:06:57

Dernière modification le : mercredi 4 décembre 2024-17:09:19

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hal-04361958 , version 1 (22-12-2023)

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Van-Cong Huynh. (43.82 %, or 44.05 %)-Limiting Highest Efficiencies, Obtained Respectively in n+(p+)-p(n) Crystalline CdS-Junction Solar Cells at T=300K, Due to the Effects of Impurity Size Temperature, Heavy Doping, and Photovoltaic Conversion. European Journal of Theoretical and Applied Sciences, 2023, 1 (6), pp.229-245. ⟨10.59324/ejtas.2023.1(6).23⟩. ⟨hal-04361958⟩

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