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Communication Dans Un Congrès Année : 2021

Towards reliability of SNNs: defect implementation on STT-MRAM cell

Résumé

Spiking Neural Networks (SNNs) are being widely studied to mimic the intelligence of biological brains. In hardware level, multiple emerging non-volatile memories (NVM) are proposed to model the neural synapses, one of them being Spin-transfer Torque Magnetic Random-Access Memory (STT-MRAM). In this paper we describe a single STT-MRAM with the sense amplifier (SA) and study the effect of implemented defects on the performance of this memory cell.
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Dates et versions

hal-04358340 , version 1 (28-02-2024)

Identifiants

  • HAL Id : hal-04358340 , version 1

Citer

Salah Daddinounou, Elena Ioana Vatajelu. Towards reliability of SNNs: defect implementation on STT-MRAM cell. ETS 2021, May 2021, Online (due to COVID, initially planned in Leuven), Belgium. ⟨hal-04358340⟩

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