Towards reliability of SNNs: defect implementation on STT-MRAM cell
Résumé
Spiking Neural Networks (SNNs) are being widely studied to mimic the intelligence of biological brains. In hardware level, multiple emerging non-volatile memories (NVM) are proposed to model the neural synapses, one of them being Spin-transfer Torque Magnetic Random-Access Memory (STT-MRAM). In this paper we describe a single STT-MRAM with the sense amplifier (SA) and study the effect of implemented defects on the performance of this memory cell.
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PhDForum ETS21 - Towards reliability of SNNs- defect implementation on STT-MRAM cell .pdf (243.89 Ko)
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