(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in n+(p+) - p(n) Crystalline (X≡Ge, GaSb, CdTe, or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion - Archive ouverte HAL
Article Dans Une Revue SCIREA Journal of Physics Année : 2023

(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in n+(p+) - p(n) Crystalline (X≡Ge, GaSb, CdTe, or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion

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Physique [physics]

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https://hal.science/hal-04329419

Soumis le : jeudi 7 décembre 2023-15:11:40

Dernière modification le : mercredi 4 décembre 2024-17:08:29

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hal-04329419 , version 1 (07-12-2023)

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Van-Cong Huynh. (14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in n+(p+) - p(n) Crystalline (X≡Ge, GaSb, CdTe, or CdSe)-Junction Solar Cells, Due to the Effects of Impurity Size, Temperature, Heavy Doping, and Photovoltaic Conversion. SCIREA Journal of Physics, 2023, 8 (6), ⟨10.54647/physics140591⟩. ⟨hal-04329419⟩

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